SDT
Quantum
Silicon Device Tool Interface
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Material Lattice
Gallium Arsenide (GaAs)
Silicon (Si)
Germanium (Ge)
Indium Arsenide (InAs)
Solver Method
Anasazi (MPI Sparse)
Lanczos (Serial Range)
Block Lanczos (Serial Subspace)
MPI Processes (host has 8 cores)
1
2
3
4
5
6
7
8
Capped at 8 — the host's core count.
K-Point Steps (Resolution)
1–500
Shift Target (eV)
Max Range (eV)
Physics Settings
Enable Spin-Orbit Coupling
Cation Coupling
Anion Coupling
External Fields
Magnetic Field (T)
Electric Field (V/m)
Geometry & Boundary
Lattice Size (X, Y, Z Unit Cells)
Each axis 1–6, max 128 cells total.
Passivation / Periodicity
Passivate X
Passivate Y
Passivate Z
3D Unit Cell Preview
Cation / Group IV
Anion (As)
Reference:
Vogl et al. (1983) sp3s* Parameters
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